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Description
ON SEMICONDUCTOR 2N3055AG Bipolar (BJT) Single Transistor, NPN, 60 V, 6 MHz, 115 W, 15 A, 2.5 hFEThe 2N3055AG is a 60V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC to DC converters, inverters or for inductive loads requiring higher safe operating area than the 2N3055. High current gain bandwidth Safe operating area 100V Collector to base voltage (VCBO) 7V Emitter to base voltage (VEBO)
- High current-gain - bandwidth
- Safe operating area
- 100V Collector to base voltage (VCBO)
- 7V Emitter to base voltage (VEBO)
- 7A Base current (IB)
- 1.52�C/W Thermal resistance, junction to case
Applications
Audio, Motor Drive & Control, Industrial, Power Management
Product details
| Power Dissipation Pd | 115W |
| DC Collector Current | 15A |
| Collector Emitter Voltage V(br)ceo | 60V |
| Transition Frequency ft | 6MHz |
| Operating Temperature Max | 200�C |
| Transistor Polarity | NPN |
| DC Current Gain hFE | 2.5hFE |
| No. of Pins | 2Pins |
| Product Range | - |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-204 |
| MSL | - |
Other details
| Brand | ON SEMICONDUCTOR |
| Part Number | 2N3055AG |
| Quantity | Each |
| Technical Data Sheet EN |
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Shipping Notes
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Exchange/Return Notes
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